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  • IPB65R190CFDAATMA1

  • 制造商:Infineon Technologies
  • 批号:19+
  • 描述:MOSFET N-Ch 650V 57.2A D2PAK-2
  • PDF下载:pdf下载
  • 库存数量:2000+

优势价格,IPB65R190CFDAATMA1的国内现货当天可发货,国外现货7-10天发货可发货。

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详细参数

  • 制造商:Infineon
  • 产品种类:MOSFET
  • RoHS:
  • 技术:Si
  • 安装风格:SMD/SMT
  • 封装 / 箱体:TO-263-3
  • 通道数量:1 Channel
  • 晶体管极性:N-Channel
  • Vds-漏源极击穿电压:650 V
  • Id-连续漏极电流:17.5 A
  • Rds On-漏源导通电阻:171 mOhms
  • Vgs th-栅源极阈值电压:3.5 V
  • Vgs - 栅极-源极电压:20 V
  • Qg-栅极电荷:68 nC
  • 最小工作温度:- 40 C
  • 最大工作温度:+ 150 C
  • Pd-功率耗散:151 W
  • 配置:Single
  • 通道模式:Enhancement
  • 商标名:CoolMOS
  • 封装:Cut Tape
  • 封装:MouseReel
  • 封装:Reel
  • 高度:4.4 mm
  • 长度:10 mm
  • 系列:CoolMOS CFDA
  • 晶体管类型:1 N-Channel
  • 宽度:9.25 mm
  • 商标:Infineon Technologies
  • 下降时间:6.4 ns
  • 产品类型:MOSFET
  • 上升时间:8.4 ns
  • 工厂包装数量:1000
  • 子类别:MOSFETs
  • 典型关闭延迟时间:53.2 ns
  • 典型接通延迟时间:12 ns
  • 零件号别名:IPB65R190CFDA IPB65R19CFDAXT SP000928264
  • 单位重量:2 g

其它信息

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