Infineon相关型号_深圳市威尔健半导体有限公司

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IGBT 晶体管 Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod

IPD90N06S407ATMA2

MOSFET MOSFET

MOSFET MOSFET N CH 60V 75A TO-220AB

MOSFET MOSFT 40V 9A 15.5mOhm 23nC

IKD03N60RFATMA1

IGBT 晶体管 IGBT w/ INTG DIODE 600V 5A

MOSFET MOSFT 55V 13A 70mOhm 13.3nC

MOSFET 100V 1 x N-CH HEXFET for Digital Audio

MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg

MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC

IPD079N06L3GBTMA1

MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3

MOSFET 500V 3.5A 2.2Ohm MotIRFET

MOSFET 100V SINGLE N-CH 39mOhms 37nC

MOSFET MOSFT DUAL PCh -20V 5.3A

MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl

MOSFET MOSFT 12V 15A 8mOhm 26nC

MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg

MOSFET MOSFT 30V 24A 400mOhm 10nC LogLvAB

MOSFET MOSFT DUAL N/PCh 30V 5.8A

MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC

MOSFET N-Ch 40V 75A DPAK-2 OptiMOS-T2

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