Infineon相关型号_深圳市威尔健半导体有限公司

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IPB60R099C6

MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6

IRG4PC30UDPBF

IGBT 晶体管 600V ULTRAFAST 8-60 KHZ COPACK IGBT

IPP60R190C6

MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6

IPD640N06L G

MOSFET N-Ch 60V 18A DPAK-2

IRG4PH40KDPBF

IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT

IRG4PC50SPBF

IGBT 晶体管 600V DC-1 KHZ (STD) DISCRETE IGBT

IRG4PH50UPBF

IGBT 晶体管 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT

IRG4PC40KDPBF

IGBT 晶体管 600V ULTRAFAST 8-25 KHZ COPACK IGBT

IRGIB15B60KD1P

IGBT 晶体管 600V Low-Vceon

IRG4PC50WPBF

IGBT 晶体管 600V Warp 60-150kHz

IPD60R385CPATMA1

MOSFET N-Ch 600V 9A DPAK-2

IRGPS46160DPBF

IGBT 晶体管 600V TRENCH IGBT ULTRAFAST

IPW60R041P6

MOSFET HIGH POWER PRICE/PERFORM

IPW60R040CFD7XKSA1

MOSFET HIGH POWER_NEW

IPP65R045C7

MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

IPP65R045C7XKSA1

MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7

IKFW90N60EH3XKSA1

IGBT 晶体管 High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.

IPW65R045C7FKSA1

MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7

IPW60R055CFD7XKSA1

MOSFET HIGH POWER_NEW

IPL60R060CFD7AUMA1

MOSFET HIGH POWER_NEW

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