Infineon相关型号_深圳市威尔健半导体有限公司

MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther

IFF450B12ME4S8PB11BPSA1

IGBT 模块 Description:

IPD65R1K4CFDATMA2

MOSFET

IPW80R290C3AXKSA1

MOSFET

IKW75N60H3

IGBT 晶体管 IGBT PRODUCTS TrenchStop

IKP40N65H5

IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IPD06P005NATMA1

MOSFET

IPD06P005LATMA1

MOSFET

IPD060N03L G

MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3

IPP65R190CFDXKSA2

MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther

IPA65R190CFDXKSA2

MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther

IPI65R190CFDXKSA2

MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther

IHW40N135R3

IGBT 晶体管 IGBT PRODUCTS TrenchStop RC

IPA60R160P7XKSA1

MOSFET

IPP60R160P7XKSA1

MOSFET

IKW50N65H5

IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IPD090N03L G

MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3

IKW40N65H5

IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IKW40N65F5

IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IKP15N65F5

IGBT 晶体管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT